Tomonori Ichimaru

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Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V-1 s-1. The results suggested that under the(More)
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