Tomohito Tsushima

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Resistive RAMs (ReRAMs) have emerged as leading candidates to displace conventional Flash memories due to their high density, good scalability, low power and high performance. Previous ReRAM designs demonstrating high performance have done so on low density arrays (<;1Gb) while those reporting high-density arrays (>8Gb) were accompanied by relatively(More)
The growing demand for higher performance in the storage and access of data in various consumer electronic and computing devices has driven the development of nonvolatile memory (NVM) technologies. The promising candidates for future NVM such as FeRAM and PCM have demonstrated shorter access time, faster programming and wide read/write bandwidth in the chip(More)
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