Tomohiro Asano

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This paper describes a successfully developed C-band GaAs FET amplifier for satellite communication systems. In designing the amplifier, the unit FET configuration was optimized and harmonic impedances were taken into account in the input and output matching circuits for obtaining both high-gain and high-efficiency characteristics. At 3.8 GHz, the(More)
This paper describes a development of reducing die size of a monolithic microwave integrated circuit (MMIC) power amplifier (PA). This is realized as follows: first. new process development, where GaAs substrate and SiN film of MIM capacitors are thinned half, respectively. Secondly, reconsideration of pattern layout rules, where line width and spacing(More)
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