Tomislav Suligoj

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Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on the transport properties of extremely scaled (length of 10 nm and width of 1–4 nm) graphene nanoribbons. We report the dependence of the transport gap, ONand OFF-state conductances, and ON–OFF ratio on edgedefect(More)
Computational study of the InP/InGaAs single photon avalanche diode (SPAD) is performed using the additional numerical modeling employed as an extension to the TCAD software. A new simulation environment is employed to model the discrete events such as dark count rate (DCR) and photon detection efficiency (PDE) and is extensively tested for a range of(More)
Transport properties of sub-5 nm-wide graphene nanoribbons (GNRs) are investigated by using atomistic non-equilibrium Green’s function (NEGF) simulations and semiclassical mobility simulations of large ensembles of randomly generated nanoribbons. Realistic GNRs with dimensions targeting the 12 nm CMOS node are investigated by accounting for edge defects,(More)
In this paper we propose a novel Pie gate bulk FinFET structure for logic applications suitable for system-on-chip (SOC) requirements. The influence of gate at bottom to junction depth, misalignment was examined for deeper junctions and shallower junctions. It has shown that bulk FinFET with source/drain to body (S/D) junctions shallower than gate at bottom(More)
A performance of very low-cost 180 nm BiCMOS Horizontal Current Bipolar Transistor (HCBT) technology in wireless communication frequency band is analyzed. A down-converting mixer and divide-by-2 static frequency divider, fabricated using two different HCBT transistors are presented. The higher breakdown-voltage HCBT (3 additional lithography masks) has(More)
The linear characteristics of the InP/InGaAs avalanche detectors are modeled and numerically analyzed by developing a new TCAD-based simulation environment. Temperature dependency of the impact ionization coefficients in InP are fitted for 200 K to 300 K temperature range. Adjustment of the model parameters for the simulations of the dark current sources in(More)
Design of cross-coupled voltage controlled oscillator in low-cost HCBT technology is presented. Beside the low-complexity front-end devices, only 2 metal layers are used and the passives are implemented in the available on-chip structures. Varactors are fabricated as pn-junctions by using the ion implantation from the technology. Symmetric inductors are(More)