Tom K. Johansen

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—We construct a coordinate-independent description of oscillator linear response through a decomposition scheme derived independently of any Floquet theoretic results. Trading matrix algebra for a simpler graphical methodology, the text will present the reader with an opportunity to gain an intuitive understanding of the well-known phase noise macromodel.(More)
In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit performance evaluation. A single-branch cascode based PA using(More)
This paper reports on a novel balanced HBT sub-harmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fr/fmax = 180GHz/200GHz. The measured results demonstrates a(More)
In this paper we present a multi-flow transmitter developed within the EU project PANTHER and we evaluate its first proof-of-concept demonstration of up to two single- or dual-polarization optical flows with selectable wavelength, m-QAM modulation format, number of carriers and destination. Multiflow operation is realized by two polymer boards allowing(More)
In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters. It is shown that the model prediction of(More)
— We present a comprehensive nonlinear analysis of coupled oscillators and examine the trade-off between phase-noise of the oscillator and the quadrature precision. We show that asymmetry gives rise to amplitude and phase imbalance which are proportional to the inverse and inverse square, respectively, of the relative coupling strength. It is shown that the(More)
An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power(More)
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