Tobias Wutherich

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The introduction of a dielectric rear side passivation with local contacts (PERC) opens a path for improvements in the cost of crystalline silicon photovoltaics. First, the cell efficiency is increased by higher internal rear side reflectance and better passivation. Second, the elimination of the cell bow allows the use of thinner wafers to reduce the(More)
We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high J<sub>sc</sub> - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side,(More)
We present our progress in the development of monocrystalline n-type cell for industrial manufacturing. Our cell uses a homogeneous boron front-side emitter and a phosphorous back-surface field, which are contacted with screen-printed grids on both sides of the cell. Our current process allows the stable manufacturing of 156 &#x00D7; 156 mm<sup>2</sup>(More)
In this work, we investigate the applicability of counterdoping by ion implantation for the formation of pn-junctions for high efficiency interdigitated back contacted silicon solar cells. Counterdoping offers the possibility of creating the emitter with a blanket implantation and the back surface field with a masked implantation, leading to an elegant(More)
We present our progress in the development of monocrystalline n-type cell for industrial manufacturing. Our cell uses a homogeneous boron front-side emitter and a phosphorous back-surface field, which are contacted with screen-printed grids on both sides of the cell. Our current process allows the stable manufacturing of 156 &#x00D7; 156 mm<sup>2</sup>(More)
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