Tiong-Heo Tan

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This paper describes the development of a new series of highly linear low noise amplifiers for cellular base station applications using a proprietary 0.25µm enhancement-mode GaAs pHEMT technology. All LNAs has an input third order intercept point of greater than 20dBm, an output 1dB gain compression of approximately 22dBm, ideal to be used as a(More)
This paper describes design and realization of a broadband flat gain high linearity gain block MMIC amplifier with built-in temperature compensation active bias circuitry using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The MMIC amplifier delivers 14.5dB gain with gain flatness achieved within(More)
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