Tien-Ko Wang

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Ge MOS devices with about 95% Ge<sup>4+</sup> in HfGeO<sub>x</sub> interfacial layer are obtained by H<sub>2</sub>O plasma process together with in situ desorption before atomic layer deposition(More)
A stacked Si<sub>3</sub>N<sub>4</sub>/HfO<sub>2</sub> charge-trapping (CT) layer was proposed to improve erase operation and retention for CT nonvolatile memory (NVM) devices. The improvement can be(More)
To better understand the channel-hot-carrier (CHC)-induced reliability problems, a modified charge-pumping (CP) technique is proposed to characterize the distribution profiles of trap generation in(More)
A novel charge-pumping (CP) technique is demonstrated to extract border-trap distribution for high- kappa gated MOSFETs. The varying-frequency CP method is shown to be more effective than the(More)