Tibor Grasser

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The similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients in deeply scaled pFETs. A SPICE-based simplified channel percolation model is devised to(More)
Article history: Received 4 September 2011 Accepted 5 September 2011 Available online 2 October 2011 0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.002 E-mail address: grasser@iue.tuwien.ac.at Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In particular, charge trapping has long(More)
We introduce a new method to analyze the statistical properties of the defects responsible for the ubiquitous recovery behavior following negative bias temperature stress, which we term time dependent defect spectroscopy (TDDS). The TDDS relies on small-area metaloxide-semiconductor field effect transistors (MOSFETs) where recovery proceeds in discrete(More)
The large FET devices of the past were considered identical in terms of electrical performance. Consequently, the same workload resulted in an identical parameter shift in all devices. As downscaling of FET devices progressed, the gate dielectric was the first to reach nanometer dimensions, thus introducing the first stochastically distributed reliability(More)
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simulator in a realistic manner is demonstrated. The approach is based on previously proven physics of stochastic properties of individual gate oxide defects and their impact on FET operation. The proposed framework is capable of following defects with widely(More)
Based on the established properties of the most commonly observed defect in amorphous oxides, the E ′ center, we suggest a coupled two-stage model to explain the negative bias temperature instability. We show that a full model that includes the creation of E ′ centers from their neutral oxygen vacancy precursors and their ability to be repeatedly charged(More)
Measuring the degradation of modern devices subjected to bias temperature stress has turned out to be a formidable challenge. Interestingly, measurement techniques such as fastVth, on-the-fly ID,lin, and charge-pumping give quite different results. This has often been explained by the inherent recovery in non-on-the-fly techniques. Still, all these(More)
A number of recent publications explain NBTI to consist of a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the(More)
Despite a number of recent advances made in the understanding of the bias temperature instability (BTI), there is still no simple model available which can capture BTI degradation during DC or duty-factor (DF) dependent stress and the following recovery. By exploiting the intuitive features of the recently proposed capture/emission time (CET) maps [1, 2],(More)
As of date many NBTI models have been published which aim to successfully capture the essential physics [1–5]. As such, these models have mostly focused on the stress phase. The relaxation phase, on the other hand, has not received as much attention, possibly because of the contradictory results published so far. Particularly noteworthy are the very long(More)