Tiancheng Gong

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Modification of single-walled carbon nanotubes (SWNTs) on the surface of monocrystalline silicon solar cells was investigated. The modification was realized by dropping a well-distributed mixture of SWNTs and ethanol with different dosages on the surface of monocrystalline silicon solar cells in the same effective area. The experimental results showed that(More)
The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS) switching from different low resistance state (LRS) were investigated in a 1-kb array with one transistor and one resistor configuration. The HRS(More)
Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have(More)
In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x /Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2-x structure shows bidirectional memory(More)
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