Tian-Li Wu

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—This paper reports on an extensive analysis of the trapping processes and of the reliability of experimental AlGaN/ GaN MIS-HEMTs, grown on silicon substrate. The study is based on combined pulsed characterization, transient investigation , breakdown, and reverse-bias stress tests, and provides the following, relevant, information: 1) the exposure to high(More)
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room(More)
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