Thomas Sadowski

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In the last four decades the semiconductor industry has seen the success of continuously improving the performance of integrated circuits. Behind this success is the miniaturization of the Si-based transistors through down scaling the thickness of the SiO 2 gate dielectric layer. As the SiO 2 layer is approaching the atomic scale limit (∼1 nm), it needs to(More)
An ab initio computational study was performed for wurtzite CdSe nanorods over a range of diameters and cross-sectional topologies as a function of the types of terminating surface facets. Calculations show that hexagonal cross sections containing surface atoms with one dangling bond are highly stable, possessing a large electronic band gap and exhibiting(More)
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