Thiago A de Assis

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This work considers the behavior of the height distributions of the equipotential lines in a region confined by two interfaces: a cathode with an irregular interface and a distant flat anode. Both boundaries, which are maintained at distinct and constant potential values, are assumed to be conductors. The morphology of the cathode interface results from the(More)
This work presents an accurate numerical study of the electrostatics of a system formed by individual nanostructures mounted on support substrate tips, which provides a theoretical prototype for applications in field electron emission or for the construction of tips in probe microscopy that requires high resolution. The aim is to describe the conditions to(More)
This work considers the effects of the Hurst exponent (H) on the local electric field distribution and the slope of the Fowler-Nordheim (FN) plot when considering the cold field electron emission properties of rough Large-Area Conducting Field Emitter Surfaces (LACFESs). A LACFES is represented by a self-affine Weierstrass-Mandelbrot function in a given(More)
The global effects of sudden changes in the interface growth dynamics are studied using models of the Edwards-Wilkinson (EW) and Kardar-Parisi-Zhang (KPZ) classes during their growth regimes in dimensions d=1 and d=2. Scaling arguments and simulation results are combined to predict the relaxation of the difference in the roughness of the perturbed and the(More)
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