Th G van de Roer

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A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n<sup>+</sup>-n-n<sup>+</sup> drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the(More)
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