Tetsushi Isshiki

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Computed tomography (CT) has been used to assess the rotational alignment of the distal femur. The purpose of this study was to establish a simple radiographic technique to evaluate the posterior femoral condyles. For this study, 39 osteoarthritic knees and 19 normal knees were examined. The condylar twist angle and posterior condylar angle were measured(More)
Low-temperature formation processes of Ni silicide were studied by Raman scattering and cross-sectional transmission electron microscopy (TEM) using Si wafer samples deposited with thin Ni layers. Comparisons were made between two annealing methods; cold wall, lamp based rapid thermal process (lamp RTP) and a hot wall chamber RTP system. . The TEM and Raman(More)
Local structures of nickel silicide formed by heat treatment of a nickel layer sputtered on silicon (100) substrate were observed by high-resolution transmission electron microscopy. In the specimen as-sputtered and after heat treatment at 498K, a thin layer was found at the interface between Ni (Ni<sub>2</sub>Si) and the Si substrate. The layer was an(More)
Ultraviolet (UV) Raman scattering spectroscopy provides new insight into the recrystallization process versus depth in the ultra-shallow ion-implanted layer not provided by conventional characterization techniques. The recrystallization process in ultra-shallow B-implanted layers on silicon was characterized by Raman scattering spectroscopy under UV(More)
By deep-UV Raman scattering, we have characterized the recrystallization process of Si wafers that were ion-implanted with As, P and B in a very thin top layer. Thermal annealing was conducted in two ways; flash-lamp annealing and thermal annealing (hot plate). Our results suggested that the recrystallization process occurred more efficiently by flash-lamp(More)
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