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Journals and Conferences
Total ionizing dose (>1 Mrad(Si)) and SEE test results at two commercial foundries for a 0.25 /spl mu/m radhard-by-design ASIC are reported in this paper. Radhard-by-design techniques provide denser, faster and lower power space applications.
Radhard-by-design has been advanced by embedding EDAC into a 16Mbit SRAM to harden the SRAM against single event upset. Conventional radhard-by-design techniques are used for the non-memory circuitry. The estimated uncorrectable double bit error rate is 2.9 times 10<sup>-16 </sup> errors/bit-day assuming a geosynchronous orbit, the Adam's 90% worst case… (More)
Intrinsic and RadHard-by-Design hardness characterization has been performed on a 130 nm fab process. Hardness results from test chips produced in phase II of a NASA Goddard Space Flight Center contract are presented.
SEE testing performed on PLL and LVDS circuits showed both are immune to SEL to a LET of 108 MeV-cm/sup 2//mg. Temporary phase shifts and frequency changes caused by SET in the PLL are investigated.
A RadHard-by-design, PLL-based, single chip, clock network and clock generator solution has been designed, manufactured and tested. Hardness test results for the Aeroflex Colorado Springs RadClock/spl trade/ clock generator circuit designed for harsh space environment applications are presented.
Aeroflex's RadHard-by-Design commercially fabricated field programmable gate array provides a radiation hardened quick-turn solution to aerospace IC users. Characterization results for single event upset, single event latchup and total ionizing dose are presented.
Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fab process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.
The SEL, SEGR, SEB and TID test results are presented for the Cobham CAN FD Transceiver. The device is SEL, SEGR, and SEB immune to a LET &#8804; 100 MeV&#183;cm2/mg and TID qualified to 100krad(Si).
The SEL and TID test results are presented for the Cobham radiation hardened bus switch family of products. The device is SEL immune to an effective LET &#8804; 100 MeV&#183;cm2/mg and TID qualified to 300krad(Si).
A predictive SET event frequency model is used to describe the SET performance at any operating condition of a next generation PLL with 189,440 combinations of operating conditions. A DOE approach and 24 cross-section versus LET curves are used to model the large operating space of this PLL.