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Si/Si 0.66 Ge 0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and… (More)
Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10∼12µm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO<inf>2</inf> asymmetric GRIN lens (length:∼24µm). GRIN lens to single-mode-fibre practical coupling loss of −3.45 dB was achieved.