Tekehiro Fukushima

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Abstract High density 3D LSI technology using W/Cu hybrid through silicon vias (TSVs) has been proposed. Major reliability issues attributed to W/Cu hybrid TSVs in high density 3D LSIs such as (i) thermo-mechanical stress exerted by W TSVs used for signal lines and Cu TSVs used for power/ground lines in active Si, (ii) external gettering (EG) role played by(More)
We fabricated the AlGaAs/GaAs 3QW quasi-stadium laser diodes with two-electrodes and succeeded in controlling directional laser emission by applying different currents to each electrode. We showed the ratio of laser emission with two different directions is proportional to the ratio of currents injected into two electrodes. These devices are applicable for(More)
We have proposed a new three-dimensional (3D) integration technology based on a chip-to-wafer bonding method which is called a super chip integration technology. Various kinds of chips such as processor chip, memory chips, analog IC chip and sensor chips which are fabricated by different technologies can be vertically stacked into a 3D LSI chip by using a(More)
A new 3-D integration technology and heterogeneous integration technology called a super-chip integration is described. A number of known good dies (KGDs) with different sizes and different devices are simultaneously aligned and bonded onto lower chips or wafer by a chip self-assembly method using the surface tension of liquid in the super-chip integration.(More)
New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called(More)
We fabricated quasi-stadium laser diode which has a 'window' on the top of cavity by ion-etching technique to epitaxial wafer and demonstrated to observe direct lasing mode observation. In the carrier poor region, bright line can recognize. On the other hands, in the rich carrier region, lasing pattern was recognized as dark line. Both lines well fit(More)
Mode switching operation of multi-electrode strained InGaAsP multiple-quantum-well quasi-stadium laser diodes is reported. Far-field patterns exhibit highly directional emission along the laser cavity axis for current injection at the axis electrode and highly directional emission at angles plusmn19deg from the cavity axis for current injection at the ring(More)