Te-Hsin Chiu

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The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO<sub>2</sub> nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO<sub>2</sub> dielectric are investigated for PBTI characteristics. A roughly 50% reduction of V<sub>TH</sub> shift can be achieved for the 300-nm(More)
High-performance CESL strained nMOSFET with HfO<sub>2</sub> gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (g<sub>m</sub>) and driving current (I<sub>on</sub>) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior(More)
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