Taylor Vincent

Learn More
Glutaraldehyde-cross-linked chitosan (GCC), thiourea derivative of chitosan (TGC) and rubeanic acid derivative of chitosan (RADC) have previously been shown to be very efficient at removing platinum and palladium from single component dilute acidic solutions. This study examines the competitive sorption of these metal anions in bi-component mixtures for(More)
A new process is described for the preparation of chitosan gel beads using molybdate as the gelling agent. This new gelation technique leads to a structure different from that produced during alkaline coagulation of a chitosan solution. Instead of a morphology characterized by large open pores, gel beads produced in a molybdate solution, under optimum(More)
In order to be able to provide valuable data in multiparameter measurement field operations, tiltmeters need to have a noise level better or equal than 10(-9) rad for a period range from a few minutes to a few years and a long term stability ranging from 10(-7) to 10(-8) rad/yr. Tiltmeter measurements should also be as much as possible insensitive to(More)
Prussian blue (i.e., iron[III] hexacyanoferrate[II], PB) has been synthesized by reaction of iron(III) chloride with potassium hexacyanoferrate and further immobilized in chitosan sponge (cellulose fibers were added in some samples to evaluate their impact on mechanical resistance). The composite was finally re-acetylated to produce a chitin-PB sponge.(More)
Impregnated resins prepared by the immobilization of an ionic liquid (IL, Cyphos IL-101, tetradecyl(trihexyl)phosphonium chloride) into a composite biopolymer matrix (made of gelatin and alginate) have been tested for recovery of Bi(III) from acidic solutions. The concentration of HCl slightly influenced Bi(III) sorption capacity. Bismuth(III) sorption(More)
—Improving SRAM minimum operating voltage (Vmin) in scaled process nodes requires characterization of different failure mechanisms. Persistent errors caused by random variations and intermittent errors caused by random telegraph noise (RTN) both contribute to bitcell failure. Random V th shift was measured for 32,000 in-situ SRAM cells in both 28nm bulk and(More)
  • 1