Tayeb Mohammed-Brahim

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Drop on Demand inkjet printing is an attractive method for device fabrication. However, the reliability of the key printing steps is still challenging. This explains why versatile functional inks are needed. Epoxy based ink described in this study could solve this critical issue because it can be printed with low drawbacks (satellites droplets, long-lived(More)
Silicon films, typically 1 pm thick are deposited by low pressure chemical vapor deposition using pure silane at 550°C and 3 deposition rates : 13, 23 and 45 h. Using numerous physical, optical and electrical characterization techniques, we show an evident amorphous character of these as-deposited ftlms. Films deposited at high rate correspond more likely(More)
The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (100) and (111) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the(More)
An experimental and theoretical investigation of laser beam shaping using a simple binary diffractive optic is presented. Beam tailoring has been characterized by the experimental determination of two relevant parameters: beam propagation factor M(2) and the beam-shaping longitudinal range, which represents the propagating distance for which the tailored(More)
N type as well P type top gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200°C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs) doped μc-films(More)
We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B2H6/S1H4 mole ratio(More)
Thin Film Transistors (TFTs) are used as pixel switching and driving elements in active matrix liquid crystal displays. High quality of active layer on glass substrates associated with low temperatures is necessary for fabricating high performances and long-term reliable TFTs. According to the deposition conditions at low temperatures, the thin silicon(More)
Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of(More)
<lb>This work deals with the development of vertical thin film transistors (VTFTs) via the<lb>fabrication processes and the analysis of the electrical characteristics. The low-temperature (T ≤<lb>600°C) polycrystalline silicon technology is adopted in the fabrication processes. The first step<lb>of the work consists in the fabrication and characterization(More)
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