Tatsuya Ooi

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In the metallization technology for power electronic device, it has been required to develop new material with low cost for operating high-temperature at 300 degree C and highly-reliable interconnection. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10μm. We called it as(More)
The Nano-Function Paste (NFP) is a conductive paste contains Cu (or Cu composite) particles with coating and Low Melting Point Alloy (LMPA) particles. Interconnects using high Cu content (70 wt%) NFP had shown shear force after 300 deg. C storage (>1,000H) was better than that of nano-Ag paste. This paper is an analysis of low Cu content (20 wt%) NFP(More)
In the metallization technology for crystalline Si solar cell, it has been required to develop new material with low cost for high-temperature and highly-reliable interconnection. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10μm. We called it as Nanomized method. The fine(More)
In this paper, we propose an object decomposition system which can deal with partly occluded objects. In order to develop shape-independent object decomposition, the system combines different types of contour completion methods, namely, line completion, curve completion, line-symmetry completion and rotational symmetry completion. The system evaluates(More)
This paper discloses development and evaluation of die attach material using base metals (Cu and Sn) by three different type of composite. Mixing them into paste or sheet shape for die attach, we have confirmed that one of Sn-Cu components having IMC network near its surface has major role to provide robust interconnect especially for high temperature(More)
We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The(More)
This paper discloses that Nano-Function materials make TSV structure by printing technologies without CVD/PVD/Plating. For isolation layer forming, two types of TSV pattern had been examined. For metal fill, we adopted conductive paste or alloy plate contains nanomized alloys (Cu, Sn and additives) to fill via by less than 250°C condition. Re-melting(More)
This paper describes development of joint materials using only base metals (Cu and Sn) for power semiconductor assembly. The optimum composition at this moment is Cu8wt%Sn92wt% (8Cu92Sn hereafter) particles: pure Cu (100Cu hereafter) particles = 20:80 (wt% ratio), which indicates good stability under Thermal Cycling Test (TCT,(More)
In this paper, we demonstrate a high heat resistant bonding method by Cu/Sn transient liquid phase sintering (TLPS) method can be applied to die-attachment of silicon carbide (SiC)-MOSFET in high temperature operation power module. The die-attachment is made of nano-composite Cu/Sn TLPS paste. The die shear strength was 40 MPa for 3 × 3(More)
In the metallization technology for power electronic device, it has been required to develop new material for operating high-temperature at 300 °C and interconnection with high bonding strength. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10μm. We called it as(More)