Tatsunori Makino

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We have developed light-emitting devices (LEDs) of monodispersed silicon (Si) nanocrystallite active regions synthesized by pulsed laser ablation in inert background gas (PLA-IBG). The light emission spectrum had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap, at room temperature.
Random switching of wavelength demultiplexed light is numerically calculated in the variable index arrayed waveguide. Wavelength demultiplexed light is randomly switched in 4 output ports by changing the refractive index of variable index arrayed waveguide with 16 array waveguides. In the calculation, the phase differences in each array waveguide, and the(More)
The purpose of this work is to develop a near-infrared-light-emitting diode with active materials of monodispersed Si nanocrystallites that are highly compatible with ULSI technology. The monodispersed Si nanocrystallites were synthesized by laser ablation and subsequent size-classification process. The near-infrared emission was sharp and showed a peak(More)
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