Tassa Yang

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In this paper, we present a new erase gate disturb mechanism during programming of selected cell for split-gate Flash memory. This type of disturb occurs on the programmed cell sharing the same erase gate as the selected cell. The disturb is due to electron-loss from floating gate to erase gate caused by low-field Fowler-Norheim (F-N) tunneling. We proposed(More)
Physicochemical analysis in the microscopic sense is a critical assessment of monitoring the polymeric materials under a weathering test, and it links the accelerated laboratory test with the outdoor performance results for a long-term durability. Here, by taking an experimented example for vinyl siding after an outdoor weathering test in Okinawa, Japan for(More)
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