Tashfin Hossain

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grown on sapphire, metal-oxide-semiconductor (MOS) capacitors. Al 2 O 3 films were deposited on Si and GaN by atomic layer deposition (ALD) at temperatures ranging from 240-300°C. Electrical properties of all samples were investigated using capacitance-voltage (C-V), current-voltage (I-V) and conductance-frequency (G p /ω-f) measurements. The oxide layer(More)
In this paper, we analyze the performance of a non-data aided near maximum likelihood (NDA-NML) estimator for symbol timing recovery in binary digital communications. The analysis of the estimator is performed for an additive noise only channel and the simulation results are extended to a flat fading channel. The probability distribution of the timing(More)
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