Tarek M. Abdolkader

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The International Technology Roadmap for Semiconductors (ITRS) projected value for the High Performance (HP) MOSFET channel length is 10 nm at the year 2016. The FinFET is expected to replace the conventional bulk MOSFET beyond the 22 nm node due to the latter's scaling challenges. In this article the design optimization of a 10 nm FinFET is considered. It(More)
Leakage power, due to the tunneling gate current, increases aggressively with the scaling of the insulator thickness. Low Standby Power (LSTP) devices are typically designed for low power applications that put strict limits on the gate current. In this work a widely used model for the tunneling gate current in bulk MOSFET is modified to suit the Double-gate(More)
A numerical simulation tool for Schottky-Barrier Carbon Nanotube Field-Effect Transistors (SB- CNFETs), based on self-consistent solution of Poisson and continuity equations was developed. Method of moments is used for solving Poisson equation. Continuity equations are solved using current boundary conditions. Boundary currents are those currents tunneling(More)
An analytical model is developed for the carrier density in MOSFET-like carbon nanotube field-effect transistors in terms of surface potential. This model is based on approximating the density of states with delta function in addition to a constant value. The model has a continuous derivative and contains two fitting parameters, which are determined by best(More)
Quantum effects play an important role in determining the Double-Gate (DG) MOSFETs characteristics. The Non-Equilibrium Green's Function (NEGF) formalism provides a rigorous description of quantum transport in nanoscale devices. The traditional NEGF is heavy in computations and not suitable for 3D or even 2D device simulation. In this article, we propose a(More)
FinFETs is expected to replace the conventional bulk MOSFET beyond the 22 nm node due to the latter's scaling challenges. For the extremely scaled dimensions, quantum effects play an important role in determining the device characteristics. These effects can be accurately predicted only using quantum mechanical based device simulation. The Contact Block(More)
Carrier-selective contacts based on thin oxides of nickel and titanium are computationally investigated for heterojunction silicon solar cells. Replacing the standard amorphous/ c-Si heterojunction with NiO/c-Si (front) and TiO<sub>2</sub>/c-Si (back), we explore the physical requirements to enhance the cell efficiency beyond the physical limits of the(More)
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