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This paper describes a simulation model for predicting end-use energy in residential sectors of a city or region. In this model, the annual energy consumption of a dwelling is simulated from the occupants' schedule of living activities, weather data and energy efficiencies of appliances and dwellings. By summing up the simulation results for various… (More)
We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is… (More)
We have developed a novel nanoscale temperature-measurement method using fluorescence in the near-field called fluorescence near-field optics thermal nanoscopy (Fluor-NOTN). Fluor-NOTN enables the temperature distributions of nanoscale materials to be measured in vivo/in situ. The proposed method measures temperature by detecting the temperature dependent… (More)
We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as… (More)
We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.
InGaAs-embedded photonic crystal photodetectors were demonstrated towards realizing photoreceivers with small junction capacitance. A 1-A/W responsivity and a 40-Gb/s eye opening were successfully confirmed for the 1.7-μm-long device.
We demonstrate monolithic integration of a 50-μm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO<sub>2</sub>/Si substrate. The device exhibits 9.4-GHz/mA<sup>0.5</sup> modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s… (More)
We present a lateral-current-injection InP-based DFB laser consisting of a pn junction fabricated by using Zn thermal diffusion and Si ion implantation. An error-free direct modulation with a bit rate of 25 Gbit/s is achieved.