Organic light-emitting diodes (OLEDs) are attractive for next-generation displays and lighting applications because of their potential for high electroluminescence (EL) efficiency, flexibility and low-cost manufacture. Although phosphorescent emitters containing rare metals such as iridium or platinum produce devices with high EL efficiency, these metals… (More)
This Article contains an error the chemical structure shown for 4CzIPN in Figure 1a. The correct Figure 1a appears below as Figure 1.
A/sub 0.26/Ga/sub 0.74/N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm/sup 2//Vs at room temperature and approximately 25000 cm/sup 2//Vs at 15 K with a 2DEG… (More)