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Journals and Conferences
We demonstrate low hysteresis threshold current (39 mA) bistable laser diodes (BLDs), with maintaining sufficient hysteresis window (7 mA, 18% of the hysteresis threshold), in active multimode-interferometer (MMI) using lateral-modes bistability. The sufficient cross-gain saturation effect, due to the lateral-modes bistability principle, enables wide… (More)
High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) all-optical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.
Integrated 4-bti Active-MMI High-Mesa Bi-Stable Laser Diodes, which resulted in wide hysteresis of 20mA with single wavelength emission (non-grating), showed coupling efficiency of 24.5% with hemispherical lens fibre array for the first time.
High-mesa asymmetric active-MMI bi-stable laser diodes are proposed and demonstrated that resulted in single-wavelength emission (λ=1556nm, SMSR=30dB, non-grating), with all optical bi-stable switching operation, for the first time.
First CW single wavelength emission on active-MMI LDs (non-grating) at room temperature is demonstrated with SMSR of 31dB (λ=1.56µm). Eye-diagram was also confirmed at direct modulation (1.25Gbps, back to back).
Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bi-stable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.