Takeyasu Saito

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Ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors were fabricated with Pt, Al:ZnO (AZO), or Sn:In2O3 (ITO) top electrodes. Hydrogen- or deuterium-induced degradation was investigated for the three capacitors by annealing in a 3% H2/balance N2 or 3% D2/balance N2 ambient environment at 200 °C and 1 torr. The remnant polarization of all capacitors decreased(More)
Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ~ 500(More)
We fabricated ferroelectric (K,Na)NbO<sub>3</sub> (KNN) capacitors on Pt(111) or Pt(100) bottom electrodes with different substrate temperature by pulsed laser deposition. The annealing effect in O<sub>2</sub> was also investigated. KNN film on Pt(100) substrate exhibited crystal grain clearly than that on Pt(111). The 2P<sub>r</sub> and 2V<sub>c</sub>,(More)
La-doped lead zirconate titanate (Pb,La)(Zr,Ti)O<sub>3</sub> (PLZT) films were prepared via chemical solution deposition. Then, Pt, Al-doped ZnO (AZO), or Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) top electrodes were deposited on the PLZT films to investigate ferroelectric properties. Three kinds of ferroelectric capacitors were annealed in 3%(More)
PbLaZrTiOx (PLZT) thin films were deposited on Pt(111) substrate by the sol-gel method, then aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) top electrodes were deposited by pulsed laser deposition (PLD). We evaluated degradation characteristics by 3% hydrogen atmosphere annealing in 200&#x00B0;C, 1Torr. The polarization ratio of PLZT capacitors(More)
We fabricated ferroelectric (Pb,La)(Zr,Ti)O<sub>3</sub> (PLZT) capacitors by pulsed laser deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing(More)
We fabricated ferroelectric (Pb,La)(Zr,Ti)O<sub>3</sub> (PLZT) capacitors with Pt, Al:ZnO, or Sn:In<sub>2</sub>O<sub>3</sub> top electrodes. The remnant polarization decreased for these PLZT capacitors after forming gas (3%H<sub>2</sub>/balance N<sub>2</sub>) annealing at 200&#x00B0;C and 1 Torr, especially for PLZT capacitor with Pt top electrodes due to(More)
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