Taketoshi Matsumoto

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We have fabricated Si nanoparticles from Si swarf using the beads milling method. The mode diameter of produced Si nanoparticles was between 4.8 and 5.2 nm. Si nanoparticles in hexane show photoluminescence (PL) spectra with peaks at 2.56, 2.73, 2.91, and 3.09 eV. The peaked PL spectra are attributed to the vibronic structure of adsorbed dimethylanthracene(More)
The aggressive scaling of the gate oxide leads to direct gate tunneling current, which affects the floating-body effects in partially-depleted SOI MOSFETs. Experiments and simulations show that the gate-to-body current charges the body causing an unexpected 'kink' effect to occur at low drain voltage. This kink results in a second peak of transconductance,(More)
An ultrathin silicon dioxide (SiO(2)) layer with 0.65-1.5 nm thickness has been formed by approximately 100% nitric acid (HNO(3)) vapor oxidation, and its electrical characteristics and physical properties are investigated. The oxidation kinetics follows a parabolic law except for the ultrathin (<or=0.8 nm) region, indicating that diffusion of oxidizing(More)
Nowadays, ca. 176,640 tons/year of silicon (Si) (>4N) is manufactured for Si wafers used for semiconductor industry. The production of the highly pure Si wafers inevitably includes very high-temperature steps at 1400-2000 °C, which is energy-consuming and environmentally unfriendly. Inefficiently, ca. 45-55% of such costly Si is lost simply as sawdust in(More)
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