Taketomo Sato

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With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology.(More)
Interface properties of Al<sub>2</sub>O<sub>3</sub> insulated gates on AlGaN/GaN structures prepared by atomic layer deposition have been characterized, focusing on the interface state density distribution at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface. We have developed a C-V calculation method taking into account electronic states charges at the(More)
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