Takeshi Yanagida

Kazuki Nagashima6
Sakon Rahong4
Fuwei Zhuge4
6Kazuki Nagashima
4Sakon Rahong
4Fuwei Zhuge
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On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory(More)
Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we(More)
Single crystalline metal oxide nanowires formed via a vapor-liquid-solid (VLS) route provide a platform not only for studying fundamental nanoscale properties but also for exploring novel device applications. Although the crystal phase variation of metal oxides, which exhibits a variety of physical properties, is an interesting feature compared with(More)
Separation and analysis of biomolecules represent crucial processes for biological and biomedical engineering development; however, separation resolution and speed for biomolecules analysis still require improvements. To achieve separation and analysis of biomolecules in a short time, the use of highly-ordered nanostructures fabricated by top-down or(More)
Controlling the post-growth assembly of nanowires is an important challenge in the development of functional bottom-up devices. Although various methods have been developed for the controlled assembly of nanowires, it is still a challenging issue to align selectively heterogeneous nanowires at desired spatial positions on the substrate. Here we report a(More)
Resistive RAMs (ReRAMs), where the resistance is changed by voltage and current biases, have extensively been studied to develop high-speed and large-capacity nonvolatile memories as well as functional nonvolatile memories. ReRAMs are so far intended for use as alternatives to contemporary flash memories, but the applications are not limited to Boolean(More)
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