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A pure CMOS threshold voltage reference (V<inf>TR</inf>) circuit achieves temperature(T) coefficient of 5 &mu;V/&#176;C (T=-60~+100&#176;C) and supply voltage (V<inf>DD</inf>) sensitivity of 0.1 mV/V (V<inf>DD</inf>=3~5 V). The combination of subthreshold current characteristics and different operating modes in n-MOSFETs provides a small voltage and(More)
A pure CMOS threshold voltage reference (V TR) circuit achieves temperature(T) coefficient of 5 µ µ µ µ µV/°C (T=-60~+100 °C) and supply voltage(V DD) sensitivity of 0.1 mV/V (V DD =3~5 V). The combination of subthreshold current characteristics and different operating modes in n-MOSFETs provides a small voltage and temperature dependence. A feedback scheme(More)
This paper presents the dynamics of latchup turn-on behavior in scaled CMOS structures using an exact time-dependent and i wo-dimensional numerical analysis based on the finite-difference approach. Both the dynamics of surface-induced latchup triggering by a pararitic PMOSFET and direct forward biasing are examined to discuss the I wo-dimensional effects of(More)
A supply voltage (V<inf>DD</inf>) independent temperature sensor circuit by a standard 90 nm CMOS process achieves the predicted errors about &#x2212;1.0 to +2.0 &#x00B0;C (&#x2212;0.6 to +0 &#x00B0;C) for the temperature range of &#x2212;20 to +100 &#x00B0;C (+20 to +80 &#x00B0;C) for two-point calibration lines. This temperature sensor has a good(More)
A pure CMOS threshold voltage reference (V<sub>TR</sub>)circuit achieves temperature(T) coefficient of 5 &#x003BC;V/&#x000B0;C (T=60~+100 &#x000B0;C) and supply voltage(V<sub>DD</sub>) sensitivity of O.1 mV/V (V<sub>DD</sub>=3-5 V). The combination of subthreshold current characteristics and different operating modes in n-MOSFETs provides a small voltage(More)