Takao Amazawa

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thickness of 100 nm. XRD also verified slight change of peak(More)
Wurzite aluminum nitride is prepared on a c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR sputtering). Atomic force microscopy (AFM) showed flat AlN thin-film surfaces, and X-ray diffraction (XRD) analysis verified the epitaxial growth of AlN films with the full-width at half-maximum (FWHM) of the(More)
  • 1