Taiki Inoue

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We used both R-cut and R-face crystal quartz substrates for the growth of horizontally aligned single-walled carbon nanotubes (SWNTs). The R-plane (10–11) is one of the low-index crystallographic planes of crystal quartz. The surface cut from a synthetic quartz block parallel to the R-plane was used as R-cut substrates, and the exposed R-plane was used as(More)
We investigated the thermal and electrical conductivity of water seeded with single-walled carbon nanotubes (SWCNT) synthesized using the alcohol catalytic chemical vapour deposition method. Sodium deoxycholate was used as the surfactant to prepare stable nanofluids, which we then thoroughly characterized by microscopic and spectroscopic methods. Electrical(More)
We synthesize vertically aligned single-walled carbon nanotubes (VA-SWNTs) with subnanometer diameters on quartz (and SiO2/Si) substrates by alcohol CVD using Cu-anchored Co catalysts. The uniform VA-SWNTs with a nanotube diameter of 1 nm are synthesized at a CVD temperature of 800 °C and have a thickness of several tens of μm. The diameter of SWNTs was(More)
In this study, we investigated carbon feedstock decomposition conditions on the synthesis of single-walled carbon nanotubes (SWNTs) by chemical vapour deposition. We simulated gas-phase thermal decomposition of ethanol and dimethyl ether (DME) at typical SWNT growth conditions using the chemical kinetic model, and confirmed the reaction trends and primary(More)
Tall birch trees allocate extra resource due to aboveground temperature elevation to bud and male flower production rather than to plant growth. Saplings increased only plant growth under warming. Size-dependent response should be considered. We experimentally heated canopy organs of tall birch trees (Betula ermanii Cham.; 18–20 m high) growing at a high(More)
An organic film-assisted electrical breakdown technique is proposed to selectively remove metallic (m-) single-walled carbon nanotubes (SWNTs) in full length towards creation of pure semiconducting SWNT arrays which are available for the large-scale fabrication of field effect transistors (FETs). The electrical breakdown of horizontally aligned SWNT arrays(More)
1. Introduction Flexible and transparent field-effect transistors (FETs) based on organic or inorganic materials are now one of the most attractive research objects because they have potential to bring innovation in conventional electronic device systems. Recently, high-performance flexible integrated circuits using carbon nanotube thin-film transistors(More)
Controlling the detailed structures of single-walled carbon nanotubes (SWNTs) is imperative for realizing many SWNT applications, and understanding the SWNT growth mechanism is important to improve the growth techniques. In the present study, we performed SWNT growth by a catalytic chemical vapor deposition (CVD) method in wide temperature and pressure(More)
We studied the influence of gas pressure on the growth of horizontally aligned single-walled carbon nanotubes (SWCNTs) on R-cut crystal quartz substrates by alcohol chemical vapor deposition. The density of horizontally aligned SWCNTs was found to depend highly on gas pressure. Time evolution of horizontally aligned SWCNT growth revealed that the density of(More)
We observe field emission between nanogaps and voltage-driven gap extension of single-walled carbon nanotubes (SWNTs) on substrates during the electrical breakdown process. Experimental results show that the gap size is dependent on the applied voltage and humidity, which indicates high controllability of the gap size by appropriate adjustment of these(More)