Taibo Liang

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We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al0.33Ga0.67As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor ν = 1/2, where the system can be described by the composite fermion picture, we observe a crossover from(More)
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