Taeyoung Won

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A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1−xGex/Si, is proposed for the improvement of device characteristics. For analyzing the nano-scale DG MOSFET, a two-dimensional quantum-mechanical (QM) approach for solving the coupled Poisson-Schrödinger equations is reported. The advantages of a(More)
In this paper we propose a realizable RLC-in-RLC-out technique to reduce parasitic parameters. The proposed technique is an efficient MOR (Model Order Reduction) method, which makes it possible to control the rise and delay time errors within the limit corresponding to the maximum frequency of operation. In addition, the equivalent circuit with reduced(More)
A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (I-V) curves are carefully compared with experimental data to verify the validity of our theoretical work. The transconductance (G mmax =380) is(More)
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