Tadanobu Koyama

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Background:InxGa1−xSb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed.Aims:To investigate(More)
InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater(More)
Erbium co-doped TiO2 /Ag catalysts are synthesized by using a simple, one-step solvothermal method and characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, Raman analysis, X-ray photoelectron spectroscopy, and diffuse reflectance spectroscopy. The catalysts exhibit anatase crystal structures with(More)
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