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Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
Abstract Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In theExpand
Formation of monolayer graphene on a basal HOPG surface irradiated with Xe ions
Abstract Highly charged Xe q + ( q  = 5, 21, 26) ions with kinetic energy of 450 keV were extracted from electron cyclotron resonance ion source. Highly oriented pyrolytic graphite (HOPG) basalExpand
Preparation and Apply of Adjustable Angle Machine for Friction Material on Mixing and Granulation
TLDR
The machine of friction material on mixing and granulation was prepared. Expand
Sputtering induced by highly charged 208Pbq+ bombardment on Al surface
Highly charged ions (HCls) carrying high Coulomb potential energy (E p ) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface.Expand
Composition dependence of mechanical property changes in electron irradiated borosilicate glasses
Abstract Mechanical properties evolution of three kinds of ternary Na2O-B2O3-SiO2 (labeled as NBS) glasses induced by 1.2 MeV electrons has been investigated by nano-indentation measurements. TheExpand
Comparison Experimental Study on Apparent Porosity of Brake Linings for Car Based on Water Granulating Technology
In this paper, the contrast test has been done on the brake linings that have been made by water granulating technology. As a result, by contrast with the brake linings that have been done at theExpand
Potential sputtering of target ions by Arq+, Pbq+ projectiles from a silicon surface☆
Abstract Highly charged ions have been expected to be a powerful tool for the surface modification in nano-scale. The potential sputtering of highly charged ions on semi-conductors has the potentialExpand
Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions
Homogeneous radiation damage was induced in similar to 250-nm-thick In0.18Ga0.82N and Al0.2Ga0.8N films by irradiation with 8.9 MeV Bi33+ ions at room temperature. The ion fluence was in the rangeExpand
The Development of the Scaling 1:5 Friction Material Dynamometer Based on the Similarity Principle
There is more difference in the test data of the friction and wear for friction material between the small sample tester and dynamometer, because of the different structure and function. In order toExpand
Microstructural response of InGaN to swift heavy ion irradiation
A monocrystalline In0.18Ga0.82N film of similar to 275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV U-238(32+) ions to a fluence of 1.2 x 10(12) cm(-2) at roomExpand
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