Boron nitride substrates for high-quality graphene electronics.
Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Unconventional superconductivity in magic-angle graphene superlattices
- Yuan Cao, V. Fatemi, P. Jarillo-Herrero
- PhysicsNature
- 5 March 2018
The realization of intrinsic unconventional superconductivity is reported—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle.
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
- Yuan Cao, V. Fatemi, P. Jarillo-Herrero
- PhysicsNature
- 2 February 2018
It is shown experimentally that when this angle is close to the ‘magic’ angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling, and these flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons.
One-Dimensional Electrical Contact to a Two-Dimensional Material
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride.
- Jiamin Xue, J. Sanchez-Yamagishi, B. LeRoy
- PhysicsNature Materials
- 1 April 2011
Scanning tunnelling microscopy is used to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns, but contrary to predictions, this conformation does not lead to a sizeable band gap because of the misalignment of the lattices.
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
- Kenji Watanabe, T. Taniguchi, H. Kanda
- Materials ScienceNature Materials
- 1 June 2004
HBN is shown to be a promising material for compact ultraviolet laser devices because it has a direct bandgap in the ultraviolet region and evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided.
In-situ measurement of viscosity and density of carbonate melts at high pressure
- D. Dobson, A. Jones, S. Urakawa
- Geology, Physics
- 1 September 1996
Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
- A. Sharpe, E. Fox, D. Goldhaber-Gordon
- PhysicsScience
- 11 January 2019
Evidence is presented that near three-quarters of the filling of the conduction miniband, these enhanced interactions drive the twisted bilayer graphene into a ferromagnetic state, and measurements suggest that the system may be an incipient Chern insulator.
Mechanical properties of atomically thin boron nitride and the role of interlayer interactions
It is reported that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials and more intriguingly, few- Layer BN shows mechanical behaviours quite different from those of few- layer graphene under indentation.
Tunable Phonon Polaritons in Atomically Thin van der Waals Crystals of Boron Nitride
The measured dispersion of polaritonic waves was shown to be governed by the crystal thickness according to a scaling law that persists down to a few atomic layers, likely to hold true in other polar van der Waals crystals and may lead to new functionalities.
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