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Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under ourExpand
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
We present detailed results about the molecular beam epitaxy (MBE) growth of GaAs nanowires (NWs) on GaAs (111)B substrates prepared for the growth by a new method using hydrogen silsesquioxaneExpand
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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
We report on the technology and growth optimization of GaAs/InAs core/shell nanowires. The GaAs nanowire cores were grown selectively by metal organic vapor phase epitaxy (SA-MOVPE) on SiO(2) maskedExpand
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Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires
We present a novel type of core−shell nanowires in which only certain parts of the core are covered by the shell. This is achieved by the crystal phase selective growth of the InAs shell on zincExpand
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Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
Ö. Gül,1 N. Demarina,2 C. Blömers,1 T. Rieger,1 H. Lüth,1 M. I. Lepsa,1 D. Grützmacher,1 and Th. Schäpers1,* 1Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology,Expand
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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.
We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAsExpand
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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
Abstract The control of the Ga droplet during the MBE growth and its impact on the crystal structure of self-catalyzed GaAs nanowires (NWs) were investigated. The consumption of the droplet proceedsExpand
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Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires.
Electronic transport properties of InAs nanowires are studied systematically. The nanowires are grown by molecular beam epitaxy on a SiOx-covered GaAs wafer, without using foreign catalyst particles.Expand
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Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.
We present results about the growth of GaAs/InAs core-shell nanowires (NWs) using molecular beam epitaxy. The core is grown via the Ga droplet-assisted growth mechanism. For a homogeneous growth ofExpand
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