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- Publications
- Influence
High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates
- Y. Tateshita, J. Wang, +26 authors Naoki Nagashima
- Materials Science
- International Electron Devices Meeting
- 1 December 2006
CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively.… Expand
Extremely Low-voltage and High-speed Operation Bulk Thyristor-SRAM/DRAM (BT-RAM) Cell with Triple Selective Epitaxy Layers (TEL)
- T. Sugizaki, M. Nakamura, +7 authors T. Oda
- Materials Science
- IEEE International Electron Devices Meeting
- 1 December 2007
We have successfully developed an alternative SRAM cell for the first time using a bulk thyristor-RAM (BT-RAM) with triple selective epitaxy layers (TEL) for anode, n-base, and cathode. The n-base of… Expand
35-nm gate-length and ultra low-voltage (0.45 V) operation Bulk Thyristor-SRAM/DRAM (BT-RAM) cell with Triple selective Epitaxy Layers (TELs)
- T. Sugizaki, M. Nakamura, +7 authors T. Oda
- Materials Science
- Symposium on VLSI Technology
- 17 June 2008
We have successfully developed an alternative SRAM cell using a bulk thyristor-RAM (BT-RAM), which has a 35-nm gate-length with triple selective epitaxy layers (TELs) for the anode, the n-base, and… Expand
Low voltage/Sub-ns Operation Bulk Thyristor-SRAM (BT-RAM) Cell with Double Selective Epitaxy Emitters (DEE)
- T. Sugizaki, M. Nakamura, +7 authors T. Oda
- Materials Science
- IEEE Symposium on VLSI Technology
- 12 June 2007
We have successfully developed an alternative SRAM cell for the first time using a Bulk Thyristor-RAM (BT-RAM) with a Double selective Epitaxy technique for two Emitter regions (DEE). The DEE BT-RAM… Expand
Ultra High-speed Novel Bulk Thyristor-SRAM (BT-RAM) Cell with Selective Epitaxy Anode (SEA)
- T. Sugizaki, M. Nakamura, +10 authors T. Oda
- Materials Science
- International Electron Devices Meeting
- 1 December 2006
We developed novel SRAM cells using bulk thyristor-RAM (BT-RAM). BT-RAM, formed on bulk Si wafers, is low cost and has good compatibility with logic process flows. BT-RAM has excellent performance,… Expand
Advantages of bulk over SOI in performance of thyristor-based SRAM cell with selective epitaxy anode
- T. Sugizaki, M. Nakamura, +8 authors T. Oda
- Materials Science
- ESSDERC - 37th European Solid State Device…
- 1 September 2007
We fabricated alternative SRAM cells based on a thyristor using SOI and bulk Si wafers, and then compared their performance. A selective epitaxy technique was applied to form anode regions (SEA) for… Expand
Both sand particles and organic substances enhance activity of free-living, nitrogen-fixing bacteria inhabiting soil of permafrost terrain in East Siberia
- Y. Hashidoko, T. Ohchi, R. Hatano, S. Tahara
- Geology
- 2006
Although boreal forests produce large biomass, available nitrogen in the soil is poor, because of low soil temperature. Thus the mineralizing activities of the soil microorganisms are also very low.… Expand
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