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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaNExpand
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Surface-plasmon-enhanced light emitters based on InGaN quantum wells
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized1,2, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs asExpand
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Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films wasExpand
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High-power GaN P-N junction blue-light-emitting diodes
High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almostExpand
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White light emitting diodes with super-high luminous efficacy
We fabricated three types of high luminous efficacy white light emitting diodes (LEDs). The first was a white LED with a high luminous efficacy (?L) of 249?lm?W?1 and a high luminous flux (v) ofExpand
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Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
We report the demonstration of CW lasing at room temperature in a GaN-based vertical-cavity surface-emitting laser (VCSEL) by current injection. The active region of the VCSEL consisted of a two-pairExpand
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Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
We realized room-temperature lasing of blue and green GaN-based vertical-cavity surface-emitting lasers (VCSELs), for the first time, by current injection. The blue GaN-based VCSEL had a thresholdExpand
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P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency wasExpand
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Hole Compensation Mechanism of P-Type GaN Films
Low-resistivity p-type GaN films, which were obtained by N2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1×106 Ωcm afterExpand
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Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. WeExpand
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