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Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering.
Adv. Mater. 2009, 21, 593–596 2009 WILEY-VCH Verlag Gm The industrial demand for higher-temperature piezoelectric sensors is drastically increasing, for the control of automobile, aircraft, andExpand
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Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films
The authors have investigated the influence of oxygen concentration in sputtering gas on the piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates. TheExpand
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Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films
We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were depositedExpand
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Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility
c-Axis oriented aluminum nitride (A1N) thin films are successfully prepared on amorphous polyimide films by radiofrequency magnetron reactive sputtering at room temperature. Structural analysis showsExpand
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Sensitivity enhancement in diaphragms made by aluminum nitride thin films prepared on polyimide films
The authors have investigated a combination of high and low modulus materials in diaphragms for high sensitivity response. High and low modulus materials are aluminum nitride (AlN) thin films andExpand
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Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms
Aluminum nitride (AlN) thin films were prepared on Inconel 600 superalloy diaphragms by rf magnetron sputtering for the first time to our knowledge. The crystal structure of the AlN films isExpand
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Influence of sputtering pressure on polarity distribution of aluminum nitride thin films
The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences theExpand
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Local epitaxial growth of aluminum nitride and molybdenum thin films in fiber texture using aluminum nitride interlayer
The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystalExpand
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Influence of molybdenum bottom electrodes on crystal growth of aluminum nitride thin films
Abstract The authors have found that molybdenum (Mo) bottom electrodes strongly influence the crystal growth of aluminum nitride (AlN) thin films. AlN films were prepared on Si, Mo/Si andExpand
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Ultrahigh temperature vibration sensors using aluminum nitride thin films and W∕Ru multilayer electrodes
Ultrahigh temperature vibration sensors have been fabricated from highly c-axis-oriented aluminum nitride (AlN) thin films and tungsten/ruthenium (W∕Ru) multilayer bottom electrodes. These films andExpand
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