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Nanoimprint lithography for semiconductor devices and future patterning innovation
This paper describes current NIL technical status and refers to a future NIL patterning innovation such as a desktop lithography. Expand
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Mix-and-match overlay method by compensating dynamic scan distortion error
This paper discusses the compensation method and APC system to reduce errors in mix and matching overlay between scanners. We proposed the compensation model for intra-field errors in mix andExpand
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What is the strongest candidate in lithography for 2x nm HP and beyond?
We have investigated three candidate lithography technologies for 2x nm HP generation and beyond for the application to LSI, namely, double patterning technology (DPT), EUV lithography (EUVL) andExpand
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Nanoimprint lithography and future patterning for semiconductor devices
Nanoimprint lithography (NIL) has the potential capability of high resolution with critical dimension uniformity that is suited for patterning shrinkage, as well as providing a low cost advantage.Expand
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Aberration budget in extreme ultraviolet lithography
It seems that the actual EUV lithography tools will have aberrations around ten times larger than those of the latest ArF lithography tools in wavelength normalized rms. We calculated the influenceExpand
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Study of nanoimprint lithography for applications toward 22nm node CMOS devices
Nanoimprint lithography is one of the candidates for NGL. Recently, the "S-FIL TM" (Step and Flash Imprint Lithography) has been developed by MII (Molecular Imprints, Inc.). Accordingly, it isExpand
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Development of a Platform for Collaborative Engineering Data Flow between Design and Manufacturing
The amount of collaborative engineering data between design and manufacturing is increasing because of the introduction of design for manufacturing (DFM) technology to improve product yield quickly.Expand
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Basic studies of overlay performance on immersion lithography tool
Immersion lithography with ArF light and Ultra Pure Water (UPW) is the most promising technology for semiconductor manufacturing with 65 nm hp design and below. Since Nikon completed the firstExpand
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Alignment mark signal simulation system for the optimum mark feature selection
Recently the overlay accuracy has got seriously severe. For the accurate overlay, signal intensity and waveform from the topographical alignment mark has been examined by signal simulation. ActuallyExpand
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Integration of a new alignment sensor for advanced technology nodes
In this paper alignment and overlay results of the advanced technology nodes are presented. Expand
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