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Advanced TFT SRAM cell technology using a phase-shift lithography
An advanced TFT memory cell technology has been developed for making high-density and high-speed SRAM cells. The cell is fabricated using a phase-shift lithography that enables patterns with spacesExpand
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A 5.9 mu m/sup 2/ super low power SRAM cell using a new phase-shift lithography
A novel 5.89 mu m/sup 2/ memory cell for 16 Mb SRAMs has been developed. The cell is fabricated using a phase-shift photolithography that includes a method for making 0.25 mu m space patterns withExpand
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Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
We have observed very large drain current fluctuations over time in polysilicon thin film transistors (TFTs). The noise with 1/f power spectra in TFTs is found to be about 10 4 times larger than thatExpand
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Meteor Trail Echo Rejection in Atmospheric Phased Array Radars Using Adaptive Sidelobe Cancellation
Strong meteor trail echoes are interferences in the wind velocity estimates made from mesosphere radar observations. Contaminated spectra are detected by their discontinuity and are removed at theExpand
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A User Parameter-Free Diagonal-Loading Scheme for Clutter Rejection on Radar Wind Profilers
TLDR
This paper presents a novel method for the automatic determination of the diagonal-loading level for robust adaptive beamforming on radar wind profilers. Expand
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A 5.9pm2 SUPER LOW POWER SRAM CELL USING A NEW PHASE-SHIFT LITHOGRAPHY
A novel 5.89 bm* memory cell for 16 M-bit SRAMs has been developed. The cell is fabricated using a phase-shift photolithography which includes a new method for making 0.25 pm space patterns with theExpand
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