Properties of the intermediate mesa structure in deformation methods of obtaining islands of nanostructured siliconO. A. Kylinich, T. Eshtokina, G. I. Brusenskaya, I. R. Yatsunskyi, I. A. Marchuk, M. A. Glauberman2012 22nd International Crimean Conference…2012In this work on the basis of use of modern methods of researches in a combination with methods of chemical selective etching structure the surface layer of silicon consisted of area of… (More)