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13.4% efficient thin‐film CdS/CdTe solar cells
Cadmium telluride is a promising thin‐film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin‐film CdS/CdTe solar cells have beenExpand
Thin film II–VI photovoltaics
Abstract With the exception of HgSe and HgTe, II–VI compounds are direct gap semiconductors with sharp optical absorption edge and large absorption coefficients at above bandgap wavelengths. DeviceExpand
Solution‐Grown Cadmium Sulfide Films for Photovoltaic Devices
This paper reports on thin films of cadmium sulfide (CdS) which have major applications in optoelectronic devices. Several techniques have been developed for the deposition of CdS films. Among these,Expand
Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells
  • T. Chu
  • Materials Science
  • 1 April 1992
This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater,Expand
Symmetry Classification of the Energy Levels of Some Triarylmethyl Free Radicals and Their Cations
The absorption and luminescence spectra of triphenylmethyl, tri‐p‐xenylmethyl, phenyl‐di‐p‐xenylmethyl, diphenyl‐p‐xenylmethyl, and their cations have been determined. Polarization of theExpand
Crystal Growth and Properties of Boron Monoarsenide
Boron arsenide, a semiconductor with an energy gap of 1.46 eV, decomposes irreversibly at temperatures above 900 °C, thus limiting the temperature of the crystal growth process. In this work, singleExpand
14.6% efficient thin-film cadmium telluride heterojunction solar cells
Thin-film CdS/CdTe heterojunction solar cells have been prepared by the successive deposition of thin films of fluorine-doped SnO/sub 2/, CdS, p-CdTe, and an ohmic contact on glass substrates,Expand
Deposition and properties of zinc phosphide films
Thin films of zinc phosphide have been deposited on tungsten‐coated steel substrates at 400–600 °C by the reaction of zinc and phosphine in a hydrogen atmosphere; tungsten was used as a barrierExpand
Diffusion lengths in solar cells from short‐circuit current measurements
The minority‐carrier diffusion length in the base region of a silicon solar cell has been determined by measuring the short‐circuit current as a function of the wavelength of incident light. TheExpand
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