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Electronic properties of silicon nanowires
The electronic structure and transmission coefficients of Si nanowires are calculated in a sp/sup 3/d/sup 5/s/sup */ model. The effect of wire thickness on the bandgap, conduction valley splitting,Expand
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
Nanoscale heterostructures are generally characterized by local strain variations. Because the atoms in such systems can be irregularly positioned, theroretical models and parameterizations that areExpand
Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
Material layers with a thickness of a few nanometers are common-place in today's semiconduc- tor devices. Before long, device fabrication methods will reach a point at which the other two deviceExpand
Valence band effective-mass expressions in the sp 3 d 5 s * empirical tight-binding model applied to a Si and Ge parametrization
Exact, analytic expressions for the valence band effective masses in the spin-orbit, ${\mathrm{sp}}^{3}{d}^{5}{s}^{*}$ empirical tight-binding model are derived. These expressions together with anExpand
The two-capacitor problem with radiation
We discuss the two-capacitor problem found in many introductory physics texts in which there appears to be missing energy in an ideal, zero-resistance circuit, following the sudden charging of oneExpand
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighborExpand
Practical application of zone-folding concepts in tight-binding calculations
Modern supercell algorithms, such as those used in treating arrays of quantum dots or alloy calculations, are often founded upon local basis representations. Such local basis representations areExpand
Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models
A detailed study of reduced-basis tight-binding models of electrons in semiconducting quantum wells is presented. The focus is on systems with degenerate valleys, such as silicon in silicon germaniumExpand
III–V FET channel designs for high current densities and thin inversion layers
III–V FETs are being developed for potential application in 0.3–3 THz systems and VLSI. To increase bandwidth, we must increase the drive current I<inf>d</inf> = qn<inf>s</inf>Expand
Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization
State-of-the-art transistors achieve their improved performance through strain engineering. The somewhat unusual uniaxial [110] strain is of particular importance as it provides a significantExpand