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Electronic properties of silicon nanowires

- Yun Zheng, C. Rivas, R. Lake, K. Alam, T. Boykin, Gerhard Klimeck
- Materials Science
- IEEE Transactions on Electron Devices
- 23 May 2005

The electronic structure and transmission coefficients of Si nanowires are calculated in a sp/sup 3/d/sup 5/s/sup */ model. The effect of wire thickness on the bandgap, conduction valley splitting,… Expand

Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

- T. Boykin, Gerhard Klimeck, R. Bowen, F. Oyafuso
- Physics
- 24 September 2002

Nanoscale heterostructures are generally characterized by local strain variations. Because the atoms in such systems can be irregularly positioned, theroretical models and parameterizations that are… Expand

Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

- Gerhard Klimeck, F. Oyafuso, T. Boykin, R. Bowen, P. V. Allmen
- Physics
- 1 December 2002

Material layers with a thickness of a few nanometers are common-place in today's semiconduc- tor devices. Before long, device fabrication methods will reach a point at which the other two device… Expand

Valence band effective-mass expressions in the sp 3 d 5 s * empirical tight-binding model applied to a Si and Ge parametrization

- T. Boykin, Gerhard Klimeck, F. Oyafuso
- Physics
- 8 March 2004

Exact, analytic expressions for the valence band effective masses in the spin-orbit, ${\mathrm{sp}}^{3}{d}^{5}{s}^{*}$ empirical tight-binding model are derived. These expressions together with an… Expand

The two-capacitor problem with radiation

- T. Boykin, Dennis Hite, Nagendra Singh
- Physics
- 11 March 2002

We discuss the two-capacitor problem found in many introductory physics texts in which there appears to be missing energy in an ideal, zero-resistance circuit, following the sudden charging of one… Expand

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

- Gerhard Klimeck, S.S. Ahmed, +4 authors T. Boykin
- Physics
- IEEE Transactions on Electron Devices
- 27 August 2007

In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor… Expand

Practical application of zone-folding concepts in tight-binding calculations

- T. Boykin, Gerhard Klimeck
- Physics
- 31 March 2005

Modern supercell algorithms, such as those used in treating arrays of quantum dots or alloy calculations, are often founded upon local basis representations. Such local basis representations are… Expand

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

- T. Boykin, Gerhard Klimeck, +4 authors Seungwon Lee
- Physics
- 29 October 2004

A detailed study of reduced-basis tight-binding models of electrons in semiconducting quantum wells is presented. The focus is on systems with degenerate valleys, such as silicon in silicon germanium… Expand

III–V FET channel designs for high current densities and thin inversion layers

- M. Rodwell, W. Frensley, +12 authors J. Schulman
- Materials Science
- 68th Device Research Conference
- 21 June 2010

III–V FETs are being developed for potential application in 0.3–3 THz systems and VLSI. To increase bandwidth, we must increase the drive current I<inf>d</inf> = qn<inf>s</inf>… Expand

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

- T. Boykin, M. Luisier, Mehdi Salmani-Jelodar, Gerhard Klimeck
- Physics
- 5 March 2010

State-of-the-art transistors achieve their improved performance through strain engineering. The somewhat unusual uniaxial [110] strain is of particular importance as it provides a significant… Expand

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